ACE9926BFM+H_SSG9960 Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

When naming the company, the founders incorporated their nostalgia for the past and expectations for the future. A simple name with many untold stories behind it... . There are many well-known brands in the electronics industry, each brand is like a person's name, and its origin and naming have its own unique style. Their success today is due to the founders.

ACE9926BFM+H_SSG9960

TPC8208-H

BYP31538 BYP31510 BYP31575 BYH31574 BYD31523A BYH31532 BYM31580 BYH31519 BYS31535 BYM31545 .

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. . The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

ACE9926BFM+H_SSG9960

SH8K5TB

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

BYN31028Z BYN31024A BYG31013A BYN31095 BYJ31040 BYM31013A BYH31015-X BYH31015 BYS31030 BYF31040

ACE9926BFM+H_SSG9960

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

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