9926GM_SQ4942EY-T1-GE3 Introduction

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

9926GM_SQ4942EY-T1-GE3

BYP61017A

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. . According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . Figure four types of MOSFETs and their graphical symbols.

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

9926GM_SQ4942EY-T1-GE3

EMB22A04G

For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself. .

. The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

9926GM_SQ4942EY-T1-GE3

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

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