SSF2816E_NTMD5838NLR2G Introduction

The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small).

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

SSF2816E_NTMD5838NLR2G

BYH36538Z

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. . According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . Figure four types of MOSFETs and their graphical symbols.

BYP31538 BYP31510 BYP31575 BYH31574 BYD31523A BYH31532 BYM31580 BYH31519 BYS31535 BYM31545 .

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

SSF2816E_NTMD5838NLR2G

SI4214DY-T1-GE3

BYM8615 BYH8638 BYN8610A BYM8628 BYN8222 BYM31020 BYS31010 BYJ3104 BYH3105 BYP3109.

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095 BYM826 BYM8311 BYM8315 BYH8415 BYM8415.

When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

SSF2816E_NTMD5838NLR2G

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

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