BYM6420_AP4543GEM Introduction

VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line. . Although high-resolution technology is only just getting started in the audio market, its evolution is already underway.

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

BYM6420_AP4543GEM

CEG2288

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

BYM6420_AP4543GEM

AP9962AGM-HF

When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

BYN31028Z BYN31024A BYG31013A BYN31095 BYJ31040 BYM31013A BYH31015-X BYH31015 BYS31030 BYF31040

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

BYM6420_AP4543GEM

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

relevant information