BYJ6653_AP9960M Introduction

The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small).

The core of power semiconductors is the PN junction. From diodes, triodes to field effect transistors, various applications are made according to the characteristics of the PN junction. Field effect transistors are divided into junction type and insulated gate type, among which the insulated gate type is also called MOS tube (Metal Oxide Semiconductor). According to whether the inversion layer exists in the case of no electricity, MOS tubes can be divided into enhancement type and depletion type.

BYJ6653_AP9960M

SI4228DY-T1-E3

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

. The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type.

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. . The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

BYJ6653_AP9960M

SI9936BDY-T1-E3

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

BYN31028Z BYN31024A BYG31013A BYN31095 BYJ31040 BYM31013A BYH31015-X BYH31015 BYS31030 BYF31040

BYM8615 BYH8638 BYN8610A BYM8628 BYN8222 BYM31020 BYS31010 BYJ3104 BYH3105 BYP3109.

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

BYJ6653_AP9960M

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

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