BYN6338_9960GM Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes. Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first.

BYN6338_9960GM

BYJ61022A

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

. The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type.

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

BYN6338_9960GM

APM9948KC-TRL

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

BYN6338_9960GM

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

relevant information