BYP365_TPC8A01 Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

BYP365_TPC8A01

MTB17A03Q8

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

BYP365_TPC8A01

STN4822

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). Growth slows as the conduction channel approaches pinch off. Figure 1. Drain output characteristics of MOS transistors The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current region. Variable resistance region (UDS In this region, ID increases linearly as UDS increases.

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095 BYM826 BYM8311 BYM8315 BYH8415 BYM8415.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

BYP365_TPC8A01

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

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