BYS36577A_UPA1872GR-9JG-E1 Introduction

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

BYS36577A_UPA1872GR-9JG-E1

SSM9926GEO

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

BYS36577A_UPA1872GR-9JG-E1

IRF7351TRPBF

BYN31028Z BYN31024A BYG31013A BYN31095 BYJ31040 BYM31013A BYH31015-X BYH31015 BYS31030 BYF31040

When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

. The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

BYS36577A_UPA1872GR-9JG-E1

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.

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