BYF35526A_STS8DNH3LL Introduction

Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. According to the carrier of the conduction channel, it can be divided into N channel and P channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes. Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first.

BYF35526A_STS8DNH3LL

CEM8208

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

BYP31538 BYP31510 BYP31575 BYH31574 BYD31523A BYH31532 BYM31580 BYH31519 BYS31535 BYM31545 .

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

BYF35526A_STS8DNH3LL

ME4942

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

BYF35526A_STS8DNH3LL

MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package. .

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

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