BYH326_MDS5652URH Introduction

Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. According to the carrier of the conduction channel, it can be divided into N channel and P channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

BYH326_MDS5652URH

BYF38012Z

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. . The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

BYH326_MDS5652URH

UT4822L-S08-R

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

. The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

BYN31028Z BYN31024A BYG31013A BYN31095 BYJ31040 BYM31013A BYH31015-X BYH31015 BYS31030 BYF31040

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

BYH326_MDS5652URH

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

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