BYM334_SI4622DY-T1-E3 Introduction

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. According to the carrier of the conduction channel, it can be divided into N channel and P channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

BYM334_SI4622DY-T1-E3

AP9936GM

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. . The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. . According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . Figure four types of MOSFETs and their graphical symbols.

BYM334_SI4622DY-T1-E3

TM6912BGS

Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance. When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). Growth slows as the conduction channel approaches pinch off. Figure 1. Drain output characteristics of MOS transistors The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current region. Variable resistance region (UDS In this region, ID increases linearly as UDS increases.

For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself. .

BYM334_SI4622DY-T1-E3

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

relevant information