BYP332_SI4370DY-T1-E3 Introduction

The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small).

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

BYP332_SI4370DY-T1-E3

BYH343

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

BYP31538 BYP31510 BYP31575 BYH31574 BYD31523A BYH31532 BYM31580 BYH31519 BYS31535 BYM31545 .

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

BYP332_SI4370DY-T1-E3

AO4882&special 30V

When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). Growth slows as the conduction channel approaches pinch off. Figure 1. Drain output characteristics of MOS transistors The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current region. Variable resistance region (UDS In this region, ID increases linearly as UDS increases.

Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance. When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite.

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095 BYM826 BYM8311 BYM8315 BYH8415 BYM8415.

When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. . The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

BYP332_SI4370DY-T1-E3

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

relevant information