BYH31532_CEM3128 Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line. . Although high-resolution technology is only just getting started in the audio market, its evolution is already underway.

BYH31532_CEM3128

BYP36542A

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

BYH31532_CEM3128

HM4884A

The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons. On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. .

BYM8615 BYH8638 BYN8610A BYM8628 BYN8222 BYM31020 BYS31010 BYJ3104 BYH3105 BYP3109.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance. When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite.

BYH31532_CEM3128

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

relevant information