BYN31024A_AO4842 Introduction

VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line. . Although high-resolution technology is only just getting started in the audio market, its evolution is already underway.

The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small).

BYN31024A_AO4842

BYN4458

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. . According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . Figure four types of MOSFETs and their graphical symbols.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

BYN31024A_AO4842

APM4906KC-TRL

For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself. .

BYP31036 BYD31010A BYD31024A BYP31017 BYS31018 BYF3104 BYH3108 BYF3109 BYM31032 BYN31333A .

BYM8615 BYH8638 BYN8610A BYM8628 BYN8222 BYM31020 BYS31010 BYJ3104 BYH3105 BYP3109.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

BYN31024A_AO4842

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

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