BYM81080_STS2DNF30L Introduction

The core of power semiconductors is the PN junction. From diodes, triodes to field effect transistors, various applications are made according to the characteristics of the PN junction. Field effect transistors are divided into junction type and insulated gate type, among which the insulated gate type is also called MOS tube (Metal Oxide Semiconductor). According to whether the inversion layer exists in the case of no electricity, MOS tubes can be divided into enhancement type and depletion type.

The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small).

BYM81080_STS2DNF30L

BYD6456

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. . For these two enhanced MOS tubes, NMOS is more commonly used.

. The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type.

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

BYM81080_STS2DNF30L

AFN4906WS8RG

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095 BYM826 BYM8311 BYM8315 BYH8415 BYM8415.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

BYP31036 BYD31010A BYD31024A BYP31017 BYS31018 BYF3104 BYH3108 BYF3109 BYM31032 BYN31333A .

The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance. .

BYM81080_STS2DNF30L

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

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