SI6968SADQ-T1-E3 Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

CJ9926_SI4828DY-T1-E3

SI6968SADQ-T1-E3

For these two enhanced MOS tubes, NMOS is more commonly used. . As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

G: gate gate; S: source source; D: drain drain. Such devices are considered symmetrical. Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

CJ9926_SI4828DY-T1-E3

SI6968SADQ-T1-E3

When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite. Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance.

The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value. Figure 3 shows the handling characteristics of a certain FET. . The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

CJ9926_SI4828DY-T1-E3

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

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