SI6968BEDQ-T1-GE3 Introduction

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

CEM9926A_SI4808DY-T1-E3

SI6968BEDQ-T1-GE3

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

. The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type.

For these two enhanced MOS tubes, NMOS is more commonly used. . As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

CEM9926A_SI4808DY-T1-E3

SI6968BEDQ-T1-GE3

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value. Figure 3 shows the handling characteristics of a certain FET. . The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve.

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. . Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

CEM9926A_SI4808DY-T1-E3

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

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