SI6968ADQ-T1-GE3 Introduction

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

CEM9926_SI4804DY-T1-GE3

SI6968ADQ-T1-GE3

G: gate gate; S: source source; D: drain drain. Such devices are considered symmetrical. Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device.

For these two enhanced MOS tubes, NMOS is more commonly used. . As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . . Figure four types of MOSFETs and their graphical symbols.

CEM9926_SI4804DY-T1-GE3

SI6968ADQ-T1-GE3

The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area. When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. . Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant.

For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself. .

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

CEM9926_SI4804DY-T1-GE3

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

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