BYN4458_SP8K5-TB Introduction

According to the carrier of the conduction channel, it can be divided into N channel and P channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel.

The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The smaller the internal resistance, the larger the current (because the heat is small). The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance).

BYN4458_SP8K5-TB

FTD2017

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. G: gate gate; S: source source; D: drain drain. Such devices are considered symmetrical. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor.

MOS tube, is the abbreviation of MOSFET. MOSFET Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss. What do the three capacitance parameters represent in the body of the tube? How did it form? .

BYN4458_SP8K5-TB

AP6901GSM-HF

In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

BYN4458_SP8K5-TB

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

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