BYS441_SP8K2-TB Introduction

VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line. . Although high-resolution technology is only just getting started in the audio market, its evolution is already underway.

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

BYS441_SP8K2-TB

4936

In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. G: gate gate; S: source source; D: drain drain. Such devices are considered symmetrical. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

Therefore, in the application of switching power supply and motor drive, NMOS is generally used. The reason is that the on-resistance is small and it is easy to manufacture.

BYS441_SP8K2-TB

AP9965GEM & Special 30V

In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. . Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

BYS441_SP8K2-TB

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

relevant information