BYM438_SP8K1-TB Introduction

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

BYM438_SP8K1-TB

BYE3323

In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. G: gate gate; S: source source; D: drain drain. Such devices are considered symmetrical. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor.

The Source and Drain of the MOS tube can be reversed, and they are all N-type regions formed in the P-type Backgate. Such devices are considered symmetrical. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

BYM438_SP8K1-TB

SI4920DY-T1-E3

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Growth slows as the conduction channel approaches pinch off. Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. Figure MOS tube drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown Zone and Constant Current Zone. Cutoff Zone (UGS).

. For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself.

BYM438_SP8K1-TB

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

relevant information