BYM4316_SI9936DY-T1-E3 Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

According to whether the inversion layer exists in the case of no electricity, MOS tubes can be divided into enhancement type and depletion type. The core of power semiconductors is the PN junction. From diodes, triodes to field effect transistors, various applications are made according to the characteristics of the PN junction. Field effect transistors are divided into junction type and insulated gate type, among which the insulated gate type is also called MOS tube (Metal Oxide Semiconductor).

BYM4316_SI9936DY-T1-E3

HP4936DY

Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. Figure four types of MOSFETs and their graphical symbols. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . .

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

MOS tube, is the abbreviation of MOSFET. MOSFET Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

BYM4316_SI9936DY-T1-E3

CEM6188

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

When the low UDS separate pinch off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Growth slows as the conduction channel approaches pinch off. Variable resistance region (UDS In this region, when UDS increases, ID increases linearly. Figure MOS tube drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown Zone and Constant Current Zone. Cutoff Zone (UGS).

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

BYM4316_SI9936DY-T1-E3

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

relevant information