feature

High breakdown voltage typical 120 V

Low capacitance 0.017 pF typical

Low resistance 4.7Ω typical

Rugged Construction Minimum Lead Pull 4g Nitride Passivation

illustrate

The structure of the HPND-4005 Planar Beam Leaded PIN Diode provides an excellent lead for achieving excellent electrical performance at high frequency. The high beam intensity provides the user with superior assembly efficiency, while the extremely low capacitance allows for a high degree of isolation. Nitride passivation and polyimide coating provide reliable device protection.

application

The HPND-4005 Beam Pilot Diode is designed for use in stripline or microstrip circuits. Applications include switching, attenuation, phase shifting, confinement and regulation of microwave frequencies. The Model HPND-4005 is rated for maximum operating temperature -65°C to +175°C

Storage temperature -65°C to + 200 °C

250 MW power dissipation at TCASE = 25°C (linearly derated to zero at 175°C.)

Minimum lead strength pulls 4 grams per wire

Diode Mounting Temperature: 220°C for 10 seconds. maximum value. The extremely low capacitance HPND-4005 is a series diode structure for circuits requiring high isolation.

Electrical Specifications at TA=25°C

notes:

1. Total capacitance calculated from measured isolation values in series configuration.

2. Tests on packaging samples.

Bonding and Handling of Beams Procedures for Lead Diodes 1. Storage Section Under normal conditions, storage of beam diodes is sufficient in Agilent-supplied waffle/gel packs. Especially in dusty or chemically hazardous environments, storage in an inert atmo spherical desiccator is recommended.

2. Handling To avoid damage to the beam guiding equipment, special attention is paid to exercise, testing and assembly during inspection. Although beam lead diodes are designed to have an exceptional lead, their compact size requires special handling of viewing techniques so that the device is not damaged mechanically or electrically. One recommends using a vacuum cleaner for picking up beam-guiding devices, especially larger ones, for example. , quadriceps. Care must be taken to ensure that the vacuum opening needle is small enough to avoid passage of the device through the opening. 27 tip is recommended for delivery of single beam lead units. 20x requires magnification of the precise positioning device of the tip. Vacuum cleaners do not use pickers, and it is common to operate beam guides with sharpened wooden Q-tips dipped in isopropyl alcohol.

3. Cleaning For organic contamination, rinse with warm water with trichloroethane, or locally approved equivalent, and then rinse with acetone and methanol cold. Dry 5-10 infrared heat lamps on clean filter paper for a few minutes. Freon degreaser approved equivalent to replace light organic contamination with chloroform. Ultrasonic cleaning is not recommended. Acidic solvents should not be used.

4. Bonding Heat Pressing: See Application Note 979 "Beam Lead Processing and Attachment Equipment Made Simple". This method is only suitable for hard substrates. Swing: This method of equipment, placing it on the substrate and forming a thermocompression key operation. This is in the latest version of MIL-STD-883, Method 2017, for hard substrates only. Resistance welding or parallel gap welding is easier on soft substrates, and low pressure welding heads are recommended. Hughes provides suitable equipment, Industrial Products Division Carlsbad, CA. Epoxy: Solvent-free, low resistivity epoxy (available from Aberstick and improved dispensing equipment, quality epoxy bonds sufficient for many applications.

5. Lead stress In the process of connecting the beam lead diode, a certain amount of "tapping" occurs. The term wiretapping refers to the chip lift in the bonding tool due to beam deformation. This effect is to help alleviate the pressure diode pyrolysis substrate cycling. This part of the coefficient of expansion of substrates, especially flexible substrates if the circuit is operated at extreme temperatures. The thick metal clad ground plane limits the thermal expansion of the dielectric substrate axis in XY. Then, the expansion of the dielec tric will be mainly in the Z axis, without affecting the beam steering device. The solution to the candidate biplane deployment problem is to heat the substrate to the desired maximum operating temperature during bundle lead attachment. Therefore, the substrate is located when the device is bound. Subsequent cooling of the substrate can lead to tapping, similar to tapping thermocompression or epoxy bonding. Other methods are tapping the substrate during rehearsal thread assembly or prestressing.

typical application

The HMC773 is ideal for: Point-to-point radios Point-to-multipoint radios and VSAT test equipment and sensors Military end use

feature

Passive: no DC bias required

High input IP3: +22 dBm

High LO/RF isolation: 38db

Wide IF bandwidth: DC-10GHz

Up-conversion and down-conversion applications

Die size: 1.37 x 0.96 x 0.1 mm

The HMC773 is a general purpose double balanced and can be used as an upconverter or a downconverter between 6 and 26 GHz. This blender requires no external components or matching circuitry. The HMC773 provides RF and LO-IF isolation due to the optimized balun structure. The LO drive level of the mixer is +13dbm. The HMC773 wideband mixer exhibits consistent conversion gain and bandwidth compression. HMC773 also has SMT format HMC773LC3B.

Electrical Specifications, TA=+25°C, IF=0.5GHz, LO=+13dBm*

Unless otherwise stated, all measurements are made as downconverters, if = 0.5 GHz, LO = +13 dBm

Mounting and bonding technology molds for millimeter-wave GaAs monolithic integrated circuits should be eutectoid or conductive epoxy directly with the ground plane (see HMC General Handling, Mounting, Bonding Instructions). A 50-ohm microstrip transmission line on a 0.127mm (5 mil) thick aluminum oxide film is recommended to use a substrate to bring the RF in and out of the chip (Figure 1). If a 0.254mm (10 mil) thick aluminum oxide film substrate must be used, the mold should be raised by 0.150 mm (6 mils) so that the mold surface is coplanar with the substrate surface. One way to accomplish this is to attach a thick die of a 0.102mm (4 mil) 0.150 mm (6 mil) thick molybdenum heat spreader (with molybdenum sheet) and then connect to a ground plane (Figure 2). The microstrip substrate should be as close as possible to the mold in order to minimize the tape bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). A gold ribbon with a width of 0.075 mm (3 mil) and a minimum length of less than 0.31 mm is recommended (<12 mils) to minimize inductance on the RF, low-pass, and IF ports.

Operation Precautions

Follow these precautions to avoid permanent damage. Storage: All bare molds are placed in a waffle or gel-type anti-static container, then sealed in an anti-static protective bag for shipment. Once the sealed ESD protective bag has been opened, all molds should be stored in a dry nitrogen environment. Clean: Handle chips in a clean environment. Do not attempt to clean the chip using a liquid cleaning system. Electrostatic Sensitivity: Follow ESD precautions to prevent >? 50V ESD strike. Transients: Suppress instrument and bias supply transients when bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Use a vacuum chuck or a pair of sharp curved tweezers. Fragile air bridges on the chip surface must not be touched with vacuum chucks, tweezers or filters. Mount chip backside metallization, which can be mounted with AuSn eutectic preforms or conductive epoxy molds. The mounting surface should be clean and flat. Eutectic die connection: 80/20 gold-tin preforms are recommended, with a working surface temperature of 255°C and a tool temperature of 265°C. When using hot 90/10 nitrogen/hydrogen, the tip temperature should be 290°C. Do not expose chip temperatures above 320°C for more than 20 seconds. No need for scrubbing attachments longer than 3 seconds. Epoxy Die Attach: Apply a minimal amount of epoxy to the mounting surface for the perimeter after the chip is in place. Cure the epoxy according to the manufacturer's schedule. Wire Bonding 0.003" x 0.0005" tape is recommended for making RF bonds. These keys should be used, 40-60 grams. A 0.001" (0.025 mm) diameter hot-melt DC bond is recommended. Ball bonding should be done with a force of 40-50 grams and a wedge bond of 18-22 grams. All bonds should be performed at a nominal stage temperature of 150 Celsius. A minimum amount of ultrasonic energy should be used to achieve reliable bonding. All bonds should be as short as possible, less than 12 mils (0.31 mm).