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2022-09-24 13:04:29
Characteristics of FETs Shenzhen Baiyuxin Technology By chip
Field effect transistors have the following characteristics, compared with bipolar transistors.
(1) The FET is a voltage control device, which controls ID (drain current) through VGS (gate-source voltage);
(2) The control input current of the FET is extremely small, so its input resistance (107 ~ 1012Ω) is very large.
(3) It uses majority carriers to conduct electricity, so its temperature stability is better;
(4) The voltage amplification factor of the amplifier circuit formed by it is smaller than the voltage amplification factor of the amplifier circuit formed by the triode;
(5) The FET has strong anti-radiation ability;
(6) Since it does not have shot noise caused by the diffusion of electrons in chaotic motion, the noise is low.
Shenzhen Baiyuxin Technology has the advantages of supplying: low voltage field effect MOS tube (10V-200V), medium and high voltage field effect MOS tube (200V-1200V), medium and low voltage field effect MOS tube (10V-500V), separate stand effect MOS tube, super The biggest advantage of supplying a full range of field effect MOS transistors, such as junction field effect MOS transistors , Shenzhen Baiyuxin Technology Co., Ltd.