The specific parameters of IRFS3607TRLPBF are as follows Manufacturer: Infineon Product Category:MOSFET Technology: Si Installation style: SMD/SMT Package/Case:TO-263-3 Transistor Polarity: N-Channel Number of channels: 1 Channel Vds-drain-source breakdown voltage: 75 V Id-Continuous Drain Current: 80 A Rds On-drain-source on-resistance: 7.34 mOhms...
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The IPD60N10S4L12ATMA1 parameter comparison table is as follows: Manufacturer: Infineon Product Category:MOSFET RoHS: Details Technology: Si Installation style: SMD/SMT Package/Case:TO-252-3 Transistor Polarity: N-Channel Number of channels: 1 Channel Vds-drain-source breakdown voltage: 100 V Id-Continuous Drain Current: 60 A Rds On-drain-source...
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The specific parameter comparison data of LM2672M-5.0 are as follows: Manufacturer: Texas Instruments Product Category: Switching Regulators Installation style: SMD/SMT Package/Case: SOIC-8 Topology: Buck Output voltage: 5V Output current: 1 A Number of output terminals: 1 Output Maximum input voltage: 40 V Minimum input voltage: 8 V Switching frequency: 260 kH...
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The parameter data of NCP12700BMTTXG are as follows: Manufacturer: onsemi Product Category: Switch Controller RoHS: Lead-Free Environmental Labeling Number of output terminals: 1 Output Switching Frequency: 100 kHz to 1 MHz Duty Cycle - Max: 84 %_ Input voltage: 12 V to 160 V Output voltage: 12V Output current: 2.8 A Minimum operating temperature:- 40 C Ma...
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The parameter data of NCV214RSQT2G are as follows Manufacturer: onsemi Product Category: Current Sensitive Amplifier RoHS: Environmentally Friendly Lead-Free Marking Number of channels: 1 Channel Vcm - Common Mode Voltage:- 0.3 V to 26 V CMRR - Common Mode Rejection Ratio: 102 dB Ib - Input Bias Current: 60 uA Vos - Input Bias Voltage: 1 uV Supply...
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STM32F103VCT6 Specifications Parameters characteristic • Core: Arm® 32-bit Cortex®-M3 CPU - 72mhz maximum frequency, 1.25 DMIPS/MHz (Dhrystone 2.1) performance in 0 wait states memory access —Single cycle multiply and hardware department ?memory —256 ~ 512k Flash memory - Up to 64kbytes of SRAM - Flexible static memory controller, 4 chips choose. Support Comp...
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TF252TH-4A-TL-H company spot ￥ only original Manufacturer: onsemi Product Category: JFET RoHS: Details Technology: Si Transistor Polarity: N-Channel Series:TF252TH-4A-TL-H Package:Reel Package:Cut Tape Trademark: onsemi Product Type: JFETs 8000 Subcategory: Transistors Type: JFET The company has also been focusing on the promotion and sales of...
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Model: TPS3851G18SDRBT Manufacturer: Texas Instruments Product Category:Monitoring Circuit RoHS: Details Type: Voltage Supervisory Installation style: SMD/SMT Package / Box: SON-8 Threshold voltage: 1.8 V Number of monitored inputs: 1 Input Output Type: Active Low, Open Drain Manual reset: Manual Reset Watchdog Timer: Watchdog Battery Backup S...
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Model: STM32F103VGT6 Manufacturer: STMicroelectronics Product Category: ARM Microcontroller - MCU RoHS: Environmental Labeling Series: STM32F103VG Installation style: SMD/SMT Package / Box: LQFP-100 Core: ARM Cortex M3 Program memory size: 1 MB Data bus width: 32 bit ADC resolution: 12 bit Maximum clock frequency: 72 MHz Number of inpu...
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Model: TLI49611MXTMA1 Manufacturer: Infineon Product Category: Board Interface Hall Effect/Magnetic Sensor RoHS: Environmental Labeling Type: Hall Effect Latch Operating supply current: 1.6 mA Maximum output current: 25 mA Operating Point Min/Max: 0.5 mT to 3.5 mT Min/Max Release Point (Brp): - 3.5 mT to - 0.5 mT Working power supply voltage: 32 V Mi...
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The IPD60N10S4L12ATMA1 parameter comparison table is as follows: Manufacturer: Infineon Product Category:MOSFET RoHS: Environmental Labeling Installation style: SMD/SMT Package/Case:TO-252-3 Transistor Polarity: N-Channel Number of channels: 1 Channel Vds-drain-source breakdown voltage: 100 V Id-Continuous Drain Current: 60 A Rds On-drain-source ...
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