• 2022-09-23 17:35:14

ManufacturerNXP USA Inc. Core processor Coldfire V2 Core Specifications 32-bit single core Speed 80MHz Connectivity CANbus, Ethernet, I2C, QSPI, UART/USART, USB OTG Peripherals DMA, LVD, POR, PWM, WDT Number of I/Os 56 Program storage capacity 512KB (512K x 8) Program Memory Type Flash EEPROM capacity- RAM size 64K x 8 ...

• 2022-09-23 17:35:14

ManufacturerSTMicroelectronics Core processor ARM? Cortex?-M4 Core Specifications 32-bit single core Speed 168MHz Connectivity CANbus, DCMI, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SPI, ART/USART, USB OTG Peripheral Brownout Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT I/O count 82 Program storage capacity 512KB (512K x ...

• 2022-09-23 17:35:14

Manufacturer: Analog Devices Inc. Product Type: Precision Amplifier RoHS: Details Series: AD8675 Number of channels: 1 Channel GBP - Gain Bandwidth Product: 10 MHz SR - Slew rate: 2.5 V/us CMRR - Common Mode Rejection Ratio: 130 dB Output current per channel: 20 mA Ib - Input Bias Current: 2 nA Vos - Input Offset Voltage: 10 uV en - Input Voltage...

• 2022-09-23 17:35:14

Manufacturer: Analog Devices Inc. Product Type: VCO Oscillator RoHS: Details Package/Case: QFN-24 Frequency: 7.1 GHz to 7.9 GHz Working power supply voltage: 3 V Supply Voltage - Min: 2.75 V Supply Voltage - Maximum: 3.25 V Minimum Operating Temperature:- 40 C Maximum operating temperature: + 85 C Series: HMC532 Package:Cut Tape Brand: Analog Devic...

• 2022-09-23 17:35:14

STM8AF5269TAX. 1K AD7490BCPZ 4400 TPS259241DRCR MSP432P401RIPZR 6K VN7140AJTR 2.5k STL50DN6F7 3K PIC16F1823-E/ST 19.2K STMPS2141STR 12K. Original spot.

• 2022-09-23 17:35:14

TAJD336M016RNJ_TAJD336M016RNJ Introduction In electronic circuits, MOS tubes and IGBT tubes will often appear, and they can be used as switching elements. MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters, so why do some circuits use MOS tubes? And some circuits use IGBT tubes? . The difference between MOS tube and IG...

• 2022-09-23 17:35:14

TAJD336M020RNJ_TAJD336M020RNJ Introduction MOSFET can be divided into N-channel depletion type and enhancement type; P-channel depletion type and enhancement type four categories. MOS tube is MOSFET, the full name in Chinese is metal-oxide semiconductor field effect transistor. Because the gate of this field effect tube is isolated by an insulating layer, it is ...

• 2022-09-23 17:35:14

TAJD336M025RNJ_TAJD336M025RNJ Introduction Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply. TAJD336M025RNJ_TAJD336M025RNJ TAJA476K006RNJ BYP35066A...

• 2022-09-23 17:35:14

TAJD336M035RNJ_TAJD336M035RNJ Introduction The structure of the N-channel enhancement mode MOS transistor is made on a P-type silicon substrate with a low doping concentration, and two N+ regions with a high doping concentration are made, and two electrodes are drawn out with metal aluminum, which are used as the drain d and the source respectively. pole s. Then cover the ...

• 2022-09-23 17:35:14

TAJD337M010RNJ_TAJD337M010RNJ Introduction In Figure 1, we see that there is a diode between the D pole and the S pole. This diode is called a parasitic diode. The low-power MOS tube, such as the MOS tube in the integrated chip, is a planar structure, and the drain lead-out direction is from the top of the silicon wafer, that is, in the same direction as the source, an...

• 2022-09-23 17:35:14

TAJD475K035RNJ_TAJD475K035RNJ Introduction . The structure and classification of MOS tubes, there are two main types of field effect transistors, namely junction field effect transistor (JFET) and insulated gate field effect transistor (MOS tube). TAJD475K035RNJ_TAJD475K035RNJ TAJA336M006RNJ 057N08N 057N08NS 05852- 06000,, 06031.5K5%_. SP...