• 2022-09-24 22:06:10

Manufacturer: ON Semiconductor Product Category: Switch Controller RoHS: Details Topology: Boost, Flyback Number of outputs: 1 Output Switching frequency: 500 kHz Duty Cycle - Maximum: 48 %_ Output Voltage: 4.9 V to 5.1 V Output current: 1000 mA Minimum operating temperature: 0 C Maximum operating temperature: + 70 C Installation style: SMD/SMT Package/Case...

• 2022-09-24 22:06:10

Manufacturer: Texas Instruments Product Category: Buffers and Line Drivers RoHS: Details Number of input lines: 6 Input Number of output lines: 6 Output Polarity: Non-Inverting Supply Voltage - Maximum: 6 V Supply Voltage - Min: 2 V Minimum operating temperature: - 40 C Maximum operating temperature: + 85 C Installation style: SMD/SMT Package/Case: SOP-16...

• 2022-09-24 22:06:10

Manufacturer: ON Semiconductor Product Category: Rectifier RoHS: Details Mounting Style: Through Hole Package/Case: DO-41 Vr - reverse voltage: 200 V If - Forward Current: 2 A Type: Fast Recovery Rectifiers Configuration: Single Vf - Forward Voltage: 950 mV Maximum surge current: 35 A Ir - Reverse Current: 2 uA Recovery time: 35 ns Minimum operating tempe...

• 2022-09-24 22:06:10

SI2304DDS-T1-GE3 MOSFET N-CH 30V 3.3A 3-Pin SOT-23 SI2304DDS-T1-GE3 product detailed specifications Standard package 3,000 FET Type MOSFET N-Channel, Metal Oxide FET FeaturesLogic Level Gate Drain-to-source voltage (VDSS) 30V Current - Continuous Drain (Number) @ 25°C 3.3A Rds (max) @ ID, VGS60 mOhm @ 3.2A, 10V VGS (TH...

• 2022-09-24 22:06:10

Manufacturer: Texas Instruments Product Category: Operational Amplifiers - Operational Amplifiers RoHS: Details Installation style: SMD/SMT Package/Case: SOIC-8 Supply voltage - max: 36 V Number of channels: 2 Channel GBP-Gain Bandwidth Product: 3 MHz SR - Slew rate: 13 V/us CMRR - Common Mode Rejection Ratio: 70 dB to 100 dB Ib - Input Bias C...

• 2022-09-24 22:06:10

SI2304BDS-T1-GE3 Single N-Channel 30V 0.07Ohm 0.75W Surface Mount Power Mosfet - SOT-23-3 SI2304BDS-T1-GE3 product detailed specifications Standard package 3,000 FET Type MOSFET N-Channel, Metal Oxide FET FeaturesLogic Level Gate Drain-to-source voltage (VDSS) 30V Current - Continuous Drain (No.) @ 25°C 2.6A Rds (max) @ ID, VGS ...

• 2022-09-24 22:06:10

SI2303CDS-T1-GE3 VISHAY 30 V 0.19 Ohm Surface Mount Power MosFet - SOT-23-3 SI2303CDS-T1-GE3 product detailed specifications Standard package 3,000 FET Type MOSFET P-Channel, Metal Oxide FET Features Standard Drain-to-source voltage (VDSS) 30V Current - Continuous Drain (No.) @ 25°C 2.7A Rds (max) @ ID, VGS190 mOhm @ 1.9A, 10...

• 2022-09-24 22:06:10

SI2302CDS-T1-GE3 20V 710mW SOT-23-3 Power MOSFET SI2302CDS-T1-GE3 Product Specifications Standard package 3,000 FET Type MOSFET N-Channel, Metal Oxide FET FeaturesLogic Level Gate Drain-to-source voltage (VDSS) 20V Current - Continuous Drain (Number) @ 25°C 2.6A Rds (max) @ ID, VGS57 mOhm @ 3.6A, 4.5V VGS(TH) (max) @Id...

• 2022-09-24 22:06:10

C6455 DSP integrates a large amount of on-chip memory to form a two-level storage system. Level 1 (L1) program and data memory on the C6455 device is 32KB each. This memory can Configured to map RAM, cache, or some combination of the two. When configured as cache, L1 Program (L1P) is a direct-mapped cache, where L1 Data (L1D) is a bidirectional set-associative cache. of Lev...

• 2022-09-24 22:06:10

Model: PESD12VS1UB, Brand: NXP, Package: SOD523 Great price, first come first served! ! ! 1.1 General Instructions Unidirectional ESD protection diode for ESD (Electrostatic Discharge) and other transients in SOD 523 plastic package. 1.2 Features s Single-wire one-way electrostatic discharge protection s Max. Peak Pulse Power: P Polypropylene = 330 Wp = 8/2...

• 2022-09-24 22:06:10

Original genuine DSPIC33FJ256MC710-I/PF