TAJD106M035RNJ_TAJD106M035RNJ Introduction MOS tubes are often used in hardware design. The following are N-type MOS tubes, including gate G, source S, and drain D. TAJD106M035RNJ_TAJD106M035RNJ TAJC336M006RNJ TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A. SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE...
Read moreTAJD106M050RNJ_TAJD106M050RNJ Introduction In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , . TAJD106M050RNJ_TAJD106M050RN...
Read moreTAJD107K006RNJ_TAJD107K006RNJ Introduction So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes. Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first. TAJD107K006RNJ_TA...
Read moreTAJD108M002RNJ_TAJD108M002RNJ Introduction The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit. TAJD108M002RNJ_TAJD108M002RNJ TAJB686K010RNJ TAJA226M010RNJ TAJA226M0...
Read moreTAJD155K050RNJ_TAJD155K050RNJ Introduction The direction of the arrow in the symbol indicates from P (substrate) to N (channel). The source and substrate of MOS tubes are usually connected together (most tubes are connected before leaving the factory). Figures (a) and (b) are its schematic structural diagram and representative symbols, respectively. An electrode B is als...
Read moreTAJD108M004RNJ_TAJD108M004RNJ Introduction The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit. TAJD108M004RNJ_TAJD108M004RNJ TAJC156K010RNJ TAJA226M010RNJ TAJA226M0...
Read moreTAJD155M050RNJ_TAJD155M050RNJ Introduction N-channel MOS transistor Metal-Oxide-Semiconductor (Metal-Oxide-Semiconductor) transistors are referred to as MOS transistors, and are divided into P-type MOS transistors and N-type MOS transistors. An integrated circuit composed of a MOS tube is called a MOS integrated circuit, and a complementary MOS integ...
Read moreManufacturer: STMicroelectronics Product Category: Door Drive RoHS: Details Product: Relay Drivers Type:High-Side Installation style: SMD/SMT Package/Case: PowerSO-10 Number of Exciters: 4 Driver Number of output terminals: 4 Output Output current: 700 mA Supply Voltage - Min: 10 V Supply Voltage - Maximum: 36 V Rise time: 50 us Fall time: 8 us Mini...
Read moreManufacturer: STMicroelectronics Product Category: Door Drive Product: Driver ICs - Various Type:High-Side Installation style: SMD/SMT Package/Case: PowerSO-38 Number of Exciters: 8 Driver Number of output terminals: 8 Output Output current: 700 mA Supply Voltage - Min: 10.5 V Supply Voltage - Maximum: 45 V Minimum operating temperature:- 40 C Maximum...
Read moreManufacturer: Diodes Incorporated Product Category: Schottky Diodes and Rectifiers Product: Schottky Diodes Installation style: SMD/SMT Package/Case: SMA (DO-214AC) Configuration: Single Technology: Si If - Forward Current: 3 A Vrrm - Repeated reverse voltage: 30 V Vf - Forward Voltage: 500 mV Ifsm - Forward Surge Current: 80 A Ir - Reverse Curren...
Read moreManufacturer: Texas Instruments Product Category: Operational Amplifier - Operational Amplifier Installation style: SMD/SMT Package/Case: TSSOP-14 Number of channels: 4 Channel Supply Voltage - Maximum: 16 V GBP-Gain Bandwidth Product: 3 MHz Output current per channel: 7 mA SR - Slew rate: 2.4 V/us Vos - Input Bias Voltage: 4.5 mV Supply Voltage -...
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